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Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

Identifieur interne : 00A679 ( Main/Repository ); précédent : 00A678; suivant : 00A680

Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

Auteurs : RBID : Pascal:04-0132788

Descripteurs français

Pascal (Inist)
- 8560D, 8165R, 7240, Etude expérimentale, Indium composé, Gallium composé, Semiconducteur III-V, Superréseau semiconducteur, Passivation, Photodétecteur, Photodiode, Densité courant, Conductivité obscurité, Effet tunnel.

English descriptors

KwdEn :
- Current density, Dark conductivity, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Passivation, Photodetectors, Photodiodes, Semiconductor superlattices, Tunnel effect.

Abstract

We report on the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions. Compared to unpassivated detectors, zero-bias resistance of treated 400 μm×400 μm devices with 8 μm cutoff wavelength was improved by over an order of magnitude to ∼20 kΩ at 80 K. Reverse-bias dark current density was reduced by approximately two orders of magnitude to less than 10 mA/cm² at -2 V. Dark current modeling, which takes into account trap-assisted tunneling, indicates greater than 70 times reduction in bulk trap density for passivated detectors. © 2004 American Institute of Physics.

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Pascal:04-0132788

Le document en format XML

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Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

Descripteurs français

English descriptors

Abstract

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